Marktech Optoelectronics' silicon avalanche photodiodes for low light
Marktech Optoelectronics announced its standard and custom silicon avalanche photodiodes (Si APDs) for low-level light and short pulse detections of wavelengths between 400 nm and 1100 nm. The devices feature either a 230 µm or 500 µm active diameter; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; fast rise times, as low as 300 ps; frequency response to 1 GHz; and a low breakdown voltage of 80 V to 200 V. Units are also RoHS compliant. Standard Si APDs are offered with multiple customization options, including operational voltage selection and Vbr binning, wavelength specific band-pass filtering, and hybridization. The units offer low dark current and significantly higher sensitivities, including higher NIR spectral sensitivity, than can be achieved with a standard photodiode. This allows them to serve as the semiconductor near-equivalent to photomultipliers. It also allows them to accurately detect weaker light intensities in applications where higher bandwidth or internal gain may be required to overcome higher preamplifier noise levels. Typical applications include laser counting, x-ray spectroscopy, optical data communications, light detection and ranging (LiDAR) instrumentation, optical rangefinders, automated toll collectors, and vehicle self-braking and self-parking systems.