UnitedSiC introduces SiC FETs with RDS(on) less than 10 mohms
UnitedSiC is introducing four new silicon-carbide field-effect transistors (SiC FETs) with RDS(ON) levels as low as 7 mohms. The units are designed to deliver performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered DC/DC converters, high-current battery chargers, and solid-state circuit breakers. Of the four new UF3C SiC FET devices, one is rated at 650 V with RDS(on) of 7 mohm, and three rated at 1200 V with RDS(on) of 9 and 16 mohm. All are available in the TO247 package.
These new SiC FETs combine a third-generation SiC JFET and a cascode-optimized Si MOSFET. This circuit configuration creates a device in a familiar package that can be driven with the same gate voltages as Si IGBTs, Si MOSFETS, and SiC MOSFETs. In addition, to optimize high-temperature operation, silver sintering provides low thermal-resistance mounting for the TO247 package.
“What is really significant here is that we have achieved the industry’s lowest RDS(ON) for any device in this class,” explained Anup Bhalla, VP of engineering, UnitedSiC. “But in addition to that, the standard drive characteristics and versatile packaging mean these SiC FETs can be used as drop-in replacements for less efficient parts in a wide variety of applications, with little or no additional design effort.”
The UF3SC065007K4S has a maximum operating voltage of 650 V, a drain current of up to 120 A, and an RDS(ON) of 6.7 mΩ. The UF3SC120009K4S has a maximum operating voltage of 1200 V, drain current of up to 120 A, and an RDS(ON) of 8.6 mΩ. Both come in a four-lead Kelvin package, enabling cleaner drive characteristics.
For lower-power designs, UnitedSiC offers two parts with maximum operating voltages of 1200 V, drain currents of up to 77 A, and an RDS(ON) of 16 mΩ. The UF3SC120016K3S has a three-lead package, while the UF3SC120016K4S has a four-lead package.
The low RDS(ON) characteristic of these devices enable efficiencies of more than 99% in inverter designs. The excellent reverse recovery performance helps in this regard, along with the low conduction drop in the freewheeling mode.