Toshiba’s new 100V N-channel power MOSFET for reduced power consumption
Toshiba Electronic Devices & Storage Corporation released XK1R9F10QB, a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as load switches, switching power supplies, and driving of motors. Shipments start immediately.
The new product is the first in Toshiba’s new U-MOS X-H Series of MOSFET with a trench structure, and it is fabricated with the company’s latest generation process. Mounted on a low-resistance TO-220SM(W) package, it reportedly delivers industry-leading low On-resistance with a maximum On-resistance of 1.92mΩ, an approximate 20% reduction against the current TK160F10N1L. The company says that this advance helps to reduce equipment power consumption. It also delivers reduced switching noise due to optimization of capacitance characteristics, which helps to reduce Electro Magnetic Interference (EMI) of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel. The MOSFET is AEC-Q101 qualified.
For more information, visit www.toshiba.co.jp/worldwide.