Denso and FLOSFIA to develop power semiconductor for EVs
Automotive supplier Denso Corp. and FLOSFIA Inc., a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device the companies expect will reduce the energy loss, cost, size, and weight of inverters used in electric vehicles (EVs). Through the joint development project, the two companies aim to improve the efficiency of EV power control units.
In addition to the joint development partnership, Denso has acquired new shares issued by FLOSFIA in its Series C funding round.
Professor Shizuo Fujita at Kyoto University pioneered the application of corundum structured gallium oxide (α-Ga2O3) for use in semiconductors. These devices reportedly have a wide bandgap of 5.3 eV and high electric breakdown field strength, meaning they can better withstand high voltage applications. The two companies expect α-Ga2O3 to replace today's current silicon (Si) and silicon carbide (SiC) power semiconductors.
Financial terms of the investment were not disclosed.